| Title: |
Enhancement-Mode Atomic Layer Deposited W-Doped In2O3 Transistor at 55 nm Channel Length by Oxide Capping Layer with Improved Stability |
| Authors: |
Lin, Qing; Safron, Nathaniel; Zhong, Donglai; Arutchelvan, Goutham; Gilardi, Carlo; Yoo, Chanyoung; Hartanto, Jonathan; Saini, Balreen; Lai, Sheng-Chih; Pitner, Gregory; Chen, Gary; Chang, Marvin M.F.; Lin, Yu-Ming; Tsai, Wilman; McIntyre, Paul C.; Radu, Iuliana P. |
| Source: |
2024 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2024 IEEE International. :1-4 Dec, 2024 |
| Relation: |
2024 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |