Katalog Plus
Bibliothek der Frankfurt UAS
Bald neuer Katalog: sichern Sie sich schon vorab Ihre persönlichen Merklisten im Nutzerkonto: Anleitung.
Dieses Ergebnis aus IEEE Xplore Digital Library kann Gästen nicht angezeigt werden.  Login für vollen Zugriff.

Design of a 5KV Ru/3C-SiC Schottky Barrier Diode with Uniformly Graded Doping Profile for High-Temperature Applications

Title: Design of a 5KV Ru/3C-SiC Schottky Barrier Diode with Uniformly Graded Doping Profile for High-Temperature Applications
Authors: Mittal, Nupur; Charan, Piyush; Khan, Imran Ullah; Sharma, Pawan Kumar
Source: 2024 Second International Conference Computational and Characterization Techniques in Engineering & Sciences (IC3TES) Computational and Characterization Techniques in Engineering & Sciences (IC3TES), 2024 Second International Conference. :1-4 Nov, 2024
Relation: 2024 Second International Conference Computational and Characterization Techniques in Engineering & Sciences (IC3TES)
Database: IEEE Xplore Digital Library