Post Work-Function Metal Annealing Induced Significant Reliability Improvement for DDDPMOS With Dual SiO₂ Layers and Metal Gate
| Title: | Post Work-Function Metal Annealing Induced Significant Reliability Improvement for DDDPMOS With Dual SiO₂ Layers and Metal Gate |
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| Authors: | Liang, C.; Li, H.; Bi, R.; Ding, H.; Jiang, Y. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 72(5):2173-2178 May, 2025 |
| Database: | IEEE Xplore Digital Library |