RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature
| Title: | RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature |
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| Authors: | Millesimo, M.; Valentini, L.; Fiegna, C.; Sangiorgi, E.; Tallarico, A.N.; Borga, M.; Posthuma, N.; Decoutere, S.; Bakeroot, B. |
| Source: | 2025 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2025 IEEE International. :01-07 Mar, 2025 |
| Relation: | 2025 IEEE International Reliability Physics Symposium (IRPS) |
| Database: | IEEE Xplore Digital Library |