Self-Enhanced Unclamped-Inductive-Switching Robustness of High-Voltage p-GaN Gate HEMT on Sapphire Substrate
| Title: | Self-Enhanced Unclamped-Inductive-Switching Robustness of High-Voltage p-GaN Gate HEMT on Sapphire Substrate |
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| Authors: | Li, S.; Ma, Y.; Yan, H.; Li, M.; Lu, W.; Ye, R.; Wei, J.; Zhang, L.; Zhu, T.; Li, Y.; Liu, S.; Sun, W. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 72(8):4567-4571 Aug, 2025 |
| Database: | IEEE Xplore Digital Library |