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A Monolithic Dual-Layer Pixel Design with BEOL IGZO Transistors Featuring High Dual Conversion Gain Ratio and Scaled Pixel Size for Future Image Sensors

Title: A Monolithic Dual-Layer Pixel Design with BEOL IGZO Transistors Featuring High Dual Conversion Gain Ratio and Scaled Pixel Size for Future Image Sensors
Authors: Zhan, Shijie; Kaneko, Kishou; Wang, Heng; Kang, Lu; Li, Yang; Cui, Wei; Lu, Shiheng; Zhao, Wanpeng; Wang, Yuqi; Yin, Yibiao; Shao, Yuan; Lin, Zebin; Cui, Xiaojuan; Wu, Ying; Xu, Jeffrey
Source: 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2025 Symposium on. :1-3 Jun, 2025
Relation: 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Database: IEEE Xplore Digital Library