| Title: |
High Performance and Reliable 4F2 IGZO Vertical Channel Transistor (VCT) with Extremely Low Contact Resistance and 10 year BTI lifetime for sub-10nm DRAM |
| Authors: |
Ha, D.; Lee, Y.; Moon, K.J.; Lee, S.; Yoo, K.; Lee, W.; Yoo, S.; Cho, M.H.; Kim, S.N.; Terai, M.; Kim, M.; Bae, J.H.; Park, S.; Lee, S.M.; Hong, M.; Sim, K.; Im, C.; Hong, S.; Sung, C.; Kim, H.; Kim, K.; Cho, H.; Byeon, S.; Shin, I.; Chae, J.; Tak, Y.S; Yoon, H.; Kim, S.; Jeong, S.; Park, K.; Lee, S.H.; Park, S.W.; Yun, P.S.; Hyun, S.; Ahn, S. J.; Song, J.H. |
| Source: |
2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2025 Symposium on. :1-3 Jun, 2025 |
| Relation: |
2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) |
| Database: |
IEEE Xplore Digital Library |