High Endurance Resistive Switching Based on Phase Transition Realized in MoTe2 Memristors
| Title: | High Endurance Resistive Switching Based on Phase Transition Realized in MoTe2 Memristors |
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| Authors: | Hong, Y.; Su, C.; Li, Z.; Miao, X.; Yang, R. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 46(10):1757-1760 Oct, 2025 |
| Database: | IEEE Xplore Digital Library |