In-Situ Surface Energy Engineering for ALD-Derived Highly Reliable Top Gate In2O3 Thin-Film Transistors
| Title: | In-Situ Surface Energy Engineering for ALD-Derived Highly Reliable Top Gate In2O3 Thin-Film Transistors |
|---|---|
| Authors: | Eun Oh, J.; Hee Choi, C.; Kim, T.; Hun Yoon, S.; Woong Bang, S.; Chae, J.; Im, C.; Hee Cho, M.; Yun, P.; Ha, D.; Kyeong Jeong, J. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 46(11):2050-2053 Nov, 2025 |
| Database: | IEEE Xplore Digital Library |