A Monolithic GaN Driver With Power-Rail Charging Saturation Bootstrap Technique Achieving Enhanced Slew Rate and Gate Rise/Fall Time Ratio of 1.28
| Title: | A Monolithic GaN Driver With Power-Rail Charging Saturation Bootstrap Technique Achieving Enhanced Slew Rate and Gate Rise/Fall Time Ratio of 1.28 |
|---|---|
| Authors: | Qin, Y.; Ming, X.; Zhuang, C.; Lin, Z.; Huang, M.; Li, Z.; Zhang, B. |
| Source: | IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 61(5):2263-2275 May, 2026 |
| Database: | IEEE Xplore Digital Library |