A 180-nm Voltage-Controlled Magneto-Electric RAM With Sub-1-ns Switching Time
| Title: | A 180-nm Voltage-Controlled Magneto-Electric RAM With Sub-1-ns Switching Time |
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| Authors: | Suhail, H.; He, H.; Kurian Jacob, V.; Yang, J.; Wang, K.L.; Pamarti, S. |
| Source: | IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 61(5):2442-2452 May, 2026 |
| Database: | IEEE Xplore Digital Library |