Performance and Stability Improvements in β-Ga2O3 MOSFET With Thin HfAlO Gate Dielectric by O2 Plasma Treatment
| Title: | Performance and Stability Improvements in β-Ga2O3 MOSFET With Thin HfAlO Gate Dielectric by O2 Plasma Treatment |
|---|---|
| Authors: | Tian, C.; Li, Y.; Zhang, C.; Wei, S.; Li, C.; Zhan, H.; Sun, Q.; Bi, H.; Yang, W. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 72(12):6597-6604 Dec, 2025 |
| Database: | IEEE Xplore Digital Library |