Physical Models for Epitaxial Doping Dependence of SELC in SiC Power Devices
| Title: | Physical Models for Epitaxial Doping Dependence of SELC in SiC Power Devices |
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| Authors: | Sengupta, A.; Kosier, S.L.; Ball, D.R.; Islam, S.; Sternberg, A.L.; Hutson, J.M.; Osheroff, J.M.; Galloway, K.F.; Schrimpf, R.D.; Witulski, A.F. |
| Source: | IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 73(4):1189-1195 Apr, 2026 |
| Database: | IEEE Xplore Digital Library |