β-Ga2O3 Vertical U-Trench MOSFET With Nitrogen-Doped Current Blocking Layer Grown via Ex Situ and In Situ MOCVD Epitaxy
| Title: | β-Ga2O3 Vertical U-Trench MOSFET With Nitrogen-Doped Current Blocking Layer Grown via Ex Situ and In Situ MOCVD Epitaxy |
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| Authors: | Xu, X.; Lin, H.; Deng, Y.; Wang, Z.; Han, X.; Chen, D.; Wang, X.; Zeng, W.; Qi, H.; Zhang, H. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 47(1):45-48 Jan, 2026 |
| Database: | IEEE Xplore Digital Library |