Experimental Comparison of TID Hardness in MOSFETs Implemented With the Enclosed, Diamond (Hexagonal Gate), and Rectangular Layout Styles
| Title: | Experimental Comparison of TID Hardness in MOSFETs Implemented With the Enclosed, Diamond (Hexagonal Gate), and Rectangular Layout Styles |
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| Authors: | Vaz, R.G.; Goncalez, O.L.; Seixas, L.E.; Finco, S.; Peruzzi, V.V.; Gimenez, S.P. |
| Source: | IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 26(1):230-234 Mar, 2026 |
| Database: | IEEE Xplore Digital Library |