High-Temperature Enhancement-Mode Ga₂O₃ Monolithic Bidirectional Switch With >6.5 kV Breakdown Voltage
| Title: | High-Temperature Enhancement-Mode Ga₂O₃ Monolithic Bidirectional Switch With >6.5 kV Breakdown Voltage |
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| Authors: | Qin, Y.; Zhang, C.; Porter, M.; Yang, X.; Yang, Z.; Cui, H.; Wang, H.; Ye, J.; Zhang, Y. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 47(2):245-248 Feb, 2026 |
| Database: | IEEE Xplore Digital Library |