Sky-FET: A Selective Area Regrown GaN Power Device With Enhanced Breakdown Voltage
| Title: | Sky-FET: A Selective Area Regrown GaN Power Device With Enhanced Breakdown Voltage |
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| Authors: | Guo, F.; Huang, S.; Jiang, Q.; Fu, X.; An, J.; Wang, X.; Wei, K.; Liu, X.; Gao, X.; Cen, L.; Qie, H.; Liu, J.; Sun, Q.; Tang, N.; Yang, X.; Liu, W.; Shen, B. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 47(3):490-493 Mar, 2026 |
| Database: | IEEE Xplore Digital Library |