Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks
| Title: | Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks |
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| Authors: | Ye, R.; Luo, H.; Wang, S.; Hu, Z.; Bian, J.; Kang, Q.; Li, S.; Liu, S.; Sun, W. |
| Source: | IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 14:41-48 2026 |
| Database: | IEEE Xplore Digital Library |