| Title: |
High-Throughput Monolithic 3D Multi-bit Vertical 2TnF Ferroelectric Gain Cells for Computing-in-Memory to Accelerate Attention Mechanism in Transformer |
| Authors: |
Shi, Mingcheng; Ding, Yi; Wang, Yuyan; Shen, Bowen; Yang, Benjamin; Hu, Ruofei; Zhou, Yiming; Li, Jiaming; Sun, Wen; Li, Yuankun; Baek, Eunhye; Huang, Heyi; Zhang, Qingtian; Gao, Bin; Qian, He; Tang, Jianshi; Wu, Huaqiang |
| Source: |
2025 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2025 IEEE International. :1-4 Dec, 2025 |
| Relation: |
2025 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |