| Title: |
Novel channel-last integration of ALD MoS2 into stacked channel FETs on 300mm wafers |
| Authors: |
Barraud, S.; Rodriguez-Fano, M.; Pedini, J.M.; Cadot, S.; Chouk, R.; Dey, B.; Hartmann, J.M.; Gharbi, A.; Comboroure, C.; Sarrazin, A.; Boulard, F.; Laraignou, L.; Campo, A.; Grampeix, H.; Castan, C.; Sturm, J.; Souhaite, A.; Lassenberger, A.; Couture, L.; Mariolle, D.; Hauchecorne, P.; Loup, V.; Gapihan, E.; O'Brien, K.P.; Avci, U.; Andrieu, F. |
| Source: |
2025 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2025 IEEE International. :1-4 Dec, 2025 |
| Relation: |
2025 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |