| Title: |
Improving IGZO transistor PBTI reliability with hydrogen anneal achieving overdrive voltage of 1.2V for a lifetime of 5 years at 95°C |
| Authors: |
Chasin, A.; Franco, J.; Matsubayashi, D.; Tyaginov, S.; Van Setten, M.J.; De Wachter, B.; Dekkers, H.; Kruv, A.; Rinaudo, P.; Zhao, Y.; Panarella, L.; Afanas'Ev, V.; Pavel, A.; Wan, Y.; Subhechha, S.; Belmonte, A.; Kaczer, B.; Kar, G. S. |
| Source: |
2025 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2025 IEEE International. :1-4 Dec, 2025 |
| Relation: |
2025 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |