| Title: |
Hybrid Channel monolithic-CFET with Si (110) pMOS and (100) nMOS |
| Authors: |
Vandooren, A.; Iacovo, S.; Brissonneau, V.; Chiarella, T.; Cullen, C.; Casey, D.; Rengo, G.; Khazaka, R.; Eyben, P.; Kumar Channam, V. S.; Ganguly, J.; Stiers, K.; Sheng, C.; Cavalcante, C.; Hosseini, M.; Batuk, D.; Peng, A.; Zhou, X.; Sarkar, R.; Veloso, A.; Mingardi, A.; Sarkar, S. K.; Kumar Saroj, R.; Chukka, R.; Georgieva, V.; Loo, R.; Porret, C.; Dursap, T.; Akula, A.; Choudhury, S.; Dupuy, E.; Peter, A.; Jourdan, N.; Vandersmissen, K.; Montero, D.; Vrancken, E.; Sebaai, F.; Gowda, P. Puttarame; Lai, J.-G.; Chan, B. T.; Marquez, A. Sepulveda; Langer, R.; Brems, S.; Koo, I. Gyo; Sanchez, E. Altamirano; Devriendt, K.; Mitard, J.; Lima, L.P.B.; Subramanian, S.; Horiguchi, N.; Demuynck, S.; Biesemans, S. |
| Source: |
2025 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2025 IEEE International. :1-4 Dec, 2025 |
| Relation: |
2025 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |