Double-Layered-NiO/β-Ga2O3 Heterojunction Diode With 2870-V/20-A and 12.80-ns Reverse Recovery Time
| Title: | Double-Layered-NiO/β-Ga2O3 Heterojunction Diode With 2870-V/20-A and 12.80-ns Reverse Recovery Time |
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| Authors: | Dun, S.; Wang, Y.; Lv, Y.; Han, T.; Liu, H.; Han, S.; Feng, Z. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 73(2):969-974 Feb, 2026 |
| Database: | IEEE Xplore Digital Library |