A Low-Parasitic-Capacitance and High-Thermal-Uniformity Base-Substrate Structure for 15 kV Silicon Carbide Devices Based on Liquid-Vapor Two-Phase Material
| Title: | A Low-Parasitic-Capacitance and High-Thermal-Uniformity Base-Substrate Structure for 15 kV Silicon Carbide Devices Based on Liquid-Vapor Two-Phase Material |
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| Authors: | Ma, D.; Xiao, G.; Yuan, T.; Sun, P.; Guo, J.; Chen, Q.; Ding, P.; Wang, L. |
| Source: | IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 41(7):10666-10682 Jul, 2026 |
| Database: | IEEE Xplore Digital Library |