Comparative Study on High Threshold Voltage and Large Gate Swing Technologies of p-GaN Gate HEMT: Structural Scheme Versus Circuit Scheme
| Title: | Comparative Study on High Threshold Voltage and Large Gate Swing Technologies of p-GaN Gate HEMT: Structural Scheme Versus Circuit Scheme |
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| Authors: | Ma, Y.; Li, S.; Peng, S.; Ji, F.; Yan, H.; Lu, W.; Li, M.; Zhu, T.; Li, Y.; Wu, L.; Ma, J.; Ye, R.; Wei, J.; Zhang, L.; Liu, S.; Sun, W. |
| Source: | IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 41(7):10683-10693 Jul, 2026 |
| Database: | IEEE Xplore Digital Library |