Indium Tin Oxide Vertical Channel Transistors for Scaled 4F2 2T0C Gain Cell Memory With Etched Sidewall Cleaning
| Title: | Indium Tin Oxide Vertical Channel Transistors for Scaled 4F2 2T0C Gain Cell Memory With Etched Sidewall Cleaning |
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| Authors: | Gu, H.; Jung, H.; Park, M.; Lee, H.; Rim Choi, A.; Oh, I.; Zhao, Y.; Kim, B.; Kim, J.; Chul Jang, B.; Lee, Y.; Kwon, J. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 47(4):836-839 Apr, 2026 |
| Database: | IEEE Xplore Digital Library |