A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention
| Title: | A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention |
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| Authors: | Kang, H.; Joh, H.; Kwak, J.; Kim, G.; Choi, H.; Kim, H.; Park, S.; Seo, K.; Kim, K.; Kim, W.; Ha, D.; Ahn, J.; Jeon, S. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 73(5):3132-3139 May, 2026 |
| Database: | IEEE Xplore Digital Library |