Anti-Ferroelectric ZrO2 Capacitors With Ultra-High Capacitive Memory Window and Low Operating Voltage
| Title: | Anti-Ferroelectric ZrO2 Capacitors With Ultra-High Capacitive Memory Window and Low Operating Voltage |
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| Authors: | Zhang, M.; Ma, M.; Xu, J.; Qian, H.; Shen, R.; Lin, G.; Gu, J.; Song, X.; Ding, Y.; Cheng, R.; Chen, B.; Liu, Y.; Jin, C.; Chen, J.; Han, G. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 47(4):832-835 Apr, 2026 |
| Database: | IEEE Xplore Digital Library |