Suppression of Metal Boundary Effect by Inserting a Middle Barrier Layer of TaN for Metal Gates
| Title: | Suppression of Metal Boundary Effect by Inserting a Middle Barrier Layer of TaN for Metal Gates |
|---|---|
| Authors: | Liang, C.; Bi, R.; Cao, J.; Jiang, Y. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 73(4):2373-2377 Apr, 2026 |
| Database: | IEEE Xplore Digital Library |