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Performance Enhancement of Slanted T-gate $\text{Al}_{0.23} \text{Ga}_{0.77} \mathrm{N} / \text{pGaN}$-Based High Electron Mobility Transistor for Power Electronics Applications

Title: Performance Enhancement of Slanted T-gate $\text{Al}_{0.23} \text{Ga}_{0.77} \mathrm{N} / \text{pGaN}$-Based High Electron Mobility Transistor for Power Electronics Applications
Authors: Gogate, Sanyukta; Kumar, R. Saravana
Source: 2026 International Conference on Wireless Communications Signal Processing and Networking (WiSPNET) Wireless Communications Signal Processing and Networking (WiSPNET), 2026 International Conference on. :1-5 Mar, 2026
Relation: 2026 International Conference on Wireless Communications Signal Processing and Networking (WiSPNET)
Database: IEEE Xplore Digital Library