| Title: |
Using Thermally Oxide Electrode MoO2 to Reduce Read/Write Delay and Enhance Hamming Distance of FeCAM at 85 °C |
| Authors: |
Hsu, C.-H; Hsiung, M.-H; Chen, H.-M.; Huang, S.-T.; Chen, R.-Y.; Meng, W.-C; Yang, H.; Chang, W.-N.; Lin, C.-C.; Tang, Y.-T. |
| Source: |
2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2026 10th IEEE. :1-3 Mar, 2026 |
| Relation: |
2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) |
| Database: |
IEEE Xplore Digital Library |