| Title: |
Demonstration of AND-Type 3-bit/cell 2T1C Memory Featuring 1.5 V Operation, Immediate Read-After-Write, 3.5 V Memory Window, 1010 Cycle Endurance, and Fast Neuro Learning |
| Authors: |
Meng, W.-C.; Huang, S.-T.; Hsiung, M.-H.; Chen, H.-M.; Hsu, C.-H.; Lin, C.-C.; Tang, Y.-T. |
| Source: |
2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2026 10th IEEE. :1-3 Mar, 2026 |
| Relation: |
2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) |
| Database: |
IEEE Xplore Digital Library |