A 1-kV HBM/250-V CDM Low-Leakage Back-Drive Protection I/O ESD Network Design in Nanosheet/Gate-All-Around Technology
| Title: | A 1-kV HBM/250-V CDM Low-Leakage Back-Drive Protection I/O ESD Network Design in Nanosheet/Gate-All-Around Technology |
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| Authors: | Lin, I-Cheng; Lin, Ping-Chang; Chen, Chun-Cheng; Huang, Wen-Hsiang; Chen, Jie-Ting; Huang, Bo-Shih; Jao, Che-Yuan |
| Source: | 2026 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2026 IEEE International. :1-7 Mar, 2026 |
| Relation: | 2026 IEEE International Reliability Physics Symposium (IRPS) |
| Database: | IEEE Xplore Digital Library |