A New Model for Reliability Design Rules Against Well Charging Damage in IC Process
| Title: | A New Model for Reliability Design Rules Against Well Charging Damage in IC Process |
|---|---|
| Authors: | Lin, Mingte; Chen, T. C.; Chang, W. C.; Kuo, S. N.; Hsiao, R. |
| Source: | 2026 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2026 IEEE International. :1-6 Mar, 2026 |
| Relation: | 2026 IEEE International Reliability Physics Symposium (IRPS) |
| Database: | IEEE Xplore Digital Library |