Effects of Charge Confinement Under the Gate on Data Retention in 3D NAND Flash Memory
| Title: | Effects of Charge Confinement Under the Gate on Data Retention in 3D NAND Flash Memory |
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| Authors: | Gagliazzi, N.; Mauri, A. G.; Vicini, E.; Chiavarone, L.; Righetti, N.; Bi, R.; Dong, Y. |
| Source: | 2026 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2026 IEEE International. :1-6 Mar, 2026 |
| Relation: | 2026 IEEE International Reliability Physics Symposium (IRPS) |
| Database: | IEEE Xplore Digital Library |