| Title: |
Ultra-Wide Bandgap Al0.85Ga0.15N/Al0.65Ga0.35N HEMTs with Baliga Figure of Merit > 0.5 GW/cm2 leveraging LPCVD SixNy Passivation and Field Plates |
| Authors: |
Varma, Aditya Dev; Shin, Seungheon; McGlone, Joe; Darmawi-Iskandar, Patrick; Pal, Hridibrata; Zhu, Zhongyunshen; Zhu, Yinxuan; Jamil, Tariq; Hasan, S.M. Tazbiul; Al Mamun Mazumder, Abdullah; Joishi, Chandan; Fiorenza, James; Rajan, Siddharth; Khan, Asif; Palacios, Tomas |
| Source: |
2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2026 IEEE 38th International Symposium on. :573-576 May, 2026 |
| Relation: |
2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| Database: |
IEEE Xplore Digital Library |