Impact of Cell Orientation on 1.2 kV 4H-SiC MOSFETs with Channeling Implanted Deep P-well
| Title: | Impact of Cell Orientation on 1.2 kV 4H-SiC MOSFETs with Channeling Implanted Deep P-well |
|---|---|
| Authors: | Mudiyanselage, Dinuth C. Y. B. Yapa; DeBoer, Skylar; Mancini, Stephen A.; Lynch, Justin; Jang, Seung Yup; Morgan, Adam J.; Sung, Woongje |
| Source: | 2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2026 IEEE 38th International Symposium on. :509-512 May, 2026 |
| Relation: | 2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| Database: | IEEE Xplore Digital Library |