| Title: |
Demonstration of a 4 Mb, high density ferroelectric memory embedded within a 130 nm, 5 LM Cu/FSG logic process |
| Authors: |
Moise, T.S.; Summerfelt, S.R.; McAdams, H.; Aggarwal, S.; Udayakumar, K.R.; Celii, F.G.; Martin, J.S.; Xing, G.; Hall, L.; Taylor, K.J.; Hurd, T.; Rodriguez, J.; Remack, K.; Khan, M.D.; Boku, K.; Stacey, G.; Yao, M.; Albrecht, M.G.; Zielinski, E.; Thakre, M.; Kuchimanchi, S.; Thomas, A.; McKee, B.; Rickes, J.; Wang, A.; Grace, J.; Fong, J.; Lee, D.; Pietrzyk, C.; Lanham, R.; Gilbert, S.R.; Taylor, D.; Amano, J.; Bailey, R.; Chu, F.; Fox, G.; Sun, S.; Davenport, T. |
| Source: |
Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :535-538 2002 |
| Relation: |
IEEE International Electron Devices Meeting |
| Database: |
IEEE Xplore Digital Library |