| Title: |
Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices [MOSFETs] |
| Authors: |
Harris, H.R.; Choi, R.; Lee, B.H.; Young, C.D.; Sim, J.H.; Mathews, K.; Zeitzoff, P.; Majhi, P.; Bersuker, G. |
| Source: |
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Reliability physics Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International. :80-83 2005 |
| Relation: |
2005 IEEE International Reliability Physics Symposium. Proceedings 43rd Annual |
| Database: |
IEEE Xplore Digital Library |