| Title: |
Channel Engineering for the Reduction of Random-Dopant Placement-Induced Threshold Voltage Fluctuations in Vertical sub-100nm MOSFETs |
| Authors: |
Hansch, W.; Anil, K.; Bieringer, P.; Fink, C.; Kaesen, F.; Eisele, I.; Tanaka, M.; Miura-Mattausch, M. |
| Source: |
29th European Solid-State Device Research Conference Solid-State Device Research Conference, 1999. Proceeding of the 29th European. 1:408-411 1999 |
| Relation: |
29th European Solid-State Device Research Conference |
| Database: |
IEEE Xplore Digital Library |