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0.1/spl mu/m InGaAs/InAlAs/InP HEMT low noise amplifiers with compact stacked cascode design and its de-bias effect induced failure (DBIF)

Title: 0.1/spl mu/m InGaAs/InAlAs/InP HEMT low noise amplifiers with compact stacked cascode design and its de-bias effect induced failure (DBIF)
Authors: Grundbacher, R.; Chou, Y.C.; Raja, R.; Lai, R.; Leung, D.; Kan, Q.; Schreyer, G.; Zell, G.; Eng, D.; Liu, P.H.; Block, T.; Oki, A.
Source: International Conference on Indium Phosphide and Related Materials, 2005 Indium Phosphate and Related Materials Indium Phosphide and Related Materials, 2005. International Conference on. :181-184 2005
Relation: 2005 International Conference on Indium Phosphate And Related Materials
Database: IEEE Xplore Digital Library