| Title: |
Degradation mechanism and reliability improvement of InGaAs/InAlAs/InP HEMTs using new gate metal electrode technology |
| Authors: |
Chou, Y.C.; Grundbacher, R.; Leung, D.; Lai, R.; Kan, Q.; Eng, D.; Liu, P.H.; Block, T.; Oki, A. |
| Source: |
International Conference on Indium Phosphide and Related Materials, 2005 Indium Phosphate and Related Materials Indium Phosphide and Related Materials, 2005. International Conference on. :223-226 2005 |
| Relation: |
2005 International Conference on Indium Phosphate And Related Materials |
| Database: |
IEEE Xplore Digital Library |