| Title: |
Cost-Effective Low $V_{t}$ Ni-FUSI CMOS on SiON by Means of Al Implant (pMOS) and $\hbox{Yb}{+}\hbox{P}$ Coimplant (nMOS) |
| Authors: |
Lauwers, A.; Veloso, A.; Chang, S.-Z.; Yu, H. Y.; Hoffmann, T.; Kerner, C.; Demand, M.; Rothschild, A.; Niwa, M.; Satoru, I.; Mitsuhashi, R.; Ameen, M.; Whittemore, G.; Pawlak, M. A.; Vrancken, C.; Demeurisse, C.; Mertens, S.; Vandervorst, W.; Absil, P.; Biesemans, S.; Kittl, J. A. |
| Source: |
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 29(1):34-37 Jan, 2008 |
| Database: |
IEEE Xplore Digital Library |