| Title: |
A comparison of 63 MeV proton and 10 keV X-ray radiation effects in 4H-SiC depletion-mode vertical trench JFETs |
| Authors: |
Jun, Bongim; Merrett, Neil; Phillips, Stan; Sutton, Akil K.; Cressler, John D.; Williams, John; Ahyi, Claude; Marshall, Paul W. |
| Source: |
2007 International Semiconductor Device Research Symposium Semiconductor Device Research Symposium, 2007 International. :1-2 Dec, 2007 |
| Relation: |
2007 International Semiconductor Device Research Symposium |
| Database: |
IEEE Xplore Digital Library |