An experimental 295 MHz CMOS 4K/spl times/256 SRAM using bidirectional read/write shared sense amps and self-timed pulsed word-line drivers
| Title: | An experimental 295 MHz CMOS 4K/spl times/256 SRAM using bidirectional read/write shared sense amps and self-timed pulsed word-line drivers |
|---|---|
| Authors: | Kushiyama, N.; Tan, C.; Clark, R.; Lin, J.; Perner, F.; Martin, L.; Leonard, M.; Coussens, G.; Cham, K. |
| Source: | IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 30(11):1286-1290 Nov, 1995 |
| Database: | IEEE Xplore Digital Library |