| Title: |
Transport and Schottky properties of GaInP capped GaInAs/InP quantum wells with extremely high electron mobilities |
| Authors: |
Ramvall, P.; Anand, S.; Carlsson, N.; Carlsson, S.-B.; Omling, P.; Samuelson, L.; Seifert, W.; Tidlund, P.; Wang, Q.; Wernersson, L.-E. |
| Source: |
Proceedings of 8th International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on. :689-692 1996 |
| Relation: |
Proceedings of 8th International Conference on Indium Phosphide and Related Materials |
| Database: |
IEEE Xplore Digital Library |