| Title: |
A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s |
| Authors: |
Marotta, G.G.; Macerola, A.; D'Alessandro, A.; Torsi, A.; Cerafogli, C.; Lattaro, C.; Musilli, C.; Rivers, D.; Sirizotti, E.; Paolini, F.; Imondi, G.; Naso, G.; Santin, G.; Botticchio, L.; De Santis, L.; Pilolli, L.; Gallese, M.L.; Incarnati, M.; Tiburzi, M.; Conenna, P.; Perugini, S.; Moschiano, V.; Di Francesco, W.; Goldman, M.; Haid, C.; Di Cicco, D.; Orlandi, D.; Rori, F.; Rossini, M.; Vali, T.; Ghodsi, R.; Roohparvar, F. |
| Source: |
2010 IEEE International Solid-State Circuits Conference - (ISSCC) Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International. :444-445 Feb, 2010 |
| Relation: |
2010 IEEE International Solid- State Circuits Conference - (ISSCC) |
| Database: |
IEEE Xplore Digital Library |