Electroluminescence and Gate Current Generated by Impact Ionization in 0.1μm GAtelength Hemts on GaAs
| Title: | Electroluminescence and Gate Current Generated by Impact Ionization in 0.1μm GAtelength Hemts on GaAs |
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| Authors: | Aniel, F.; Boucaud, P.; Sylvestre, A.; Crozat, P.; Julien, F.H.; Adde, R.; Jin, Y. |
| Source: | ESSDERC '94: 24th European Solid State Device Research Conference Solid State Device Research Conference, 1994. ESSDERC '94. 24th European. :543-546 Sep, 1994 |
| Relation: | Proceedings of the 24th European Solid State Device Research Conference |
| Database: | IEEE Xplore Digital Library |