| Title: |
Performance elements for 28nm gate length bulk devices with gate first high-k metal gate |
| Authors: |
Yuan, J.; Gruensfelder, C.; Lim, K. Y.; Wallner, T.; Jung, M. K; Sherony, M. J.; Lee, Y. M.; Chen, J.; Lai, C. W.; Chow, Y.T.; Stein, K.; Song, L. Y.; Onoda, H.; An, C. W.; Wang, H.; Moon, B. K.; Kim, J.; Inokuma, H.; Yamasaki, H.; Shah, J.; Meer, H.V.; Samavedam, S. B.; Zhang, Q. T.; Zhu, C.; Park, Y.; Lim, Y. E.; Nieuwenhuizen, R.; Han, J. P.; Hamaguchi, M.; Lai, W.L.; Belyansky, M. P.; Gluschenkov, O.; Johnson, S.; Divakaruni, R.; Kaste, E. F.; Sudijono, J.; Ku, J. H.; Matsuoka, F.; Neumueller, W.; Sampson, R.; Sekine, M.; Steegen, A. |
| Source: |
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on. :66-69 Nov, 2010 |
| Relation: |
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) |
| Database: |
IEEE Xplore Digital Library |