High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons
| Title: | High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons |
|---|---|
| Authors: | Azize, M.; Hsu, A. L.; Saadat, O. I.; Smith, M.; Gao, X.; Guo, S.; Gradecak, S.; Palacios, T. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 32(12):1680-1682 Dec, 2011 |
| Database: | IEEE Xplore Digital Library |